@article{Zhu2022, 
author = {Qinghai Zhu and Yexin Chen and Tianyi Chen and Lijian Zuo and Yijun Sun and Rong Wang and Mingsheng Xu},
title = {High performance IEICO-4F/WSe2 heterojunction photodetector based on photoluminescence quenching behavior},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {9},
pages = {8595-8602},
keywords = {tungsten diselenide, organic semiconductor, type-II heterojunction, photoluminescence quenching, photodetector},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4488-y},
doi = {10.1007/s12274-022-4488-y},
abstract = {Heterostructure is the basic building block for functional optoelectronic devices. Heterostructures consisting of two-dimensional (2D) transition metal dichalcogenides (TMDs) and organic semiconductors are currently attracting great interest for high-performance optoelectronics. However, how to design heterostructure for highly efficient optoelectronic devices remains a big challenge. Here we design high-performance organic semiconductor/WSe2 heterostructure photodetectors by tailoring the charge transfer effect between 2,2ʹ-((2Z,2ʹZ)-(((4,4,9,9-tetrakis(4-hexylphenyl)-4,9- dihydros-indaceno[1,2-b:5,6-bʹ]dithiophene-2,7-diyl)bis(4-((2-ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene)) dimalononitrile (IEICO-4F) organic semiconductors with various thicknesses and monolayer WSe2. With the increase of IEICO-4F layer thickness, the photoluminescence (PL) characteristics of WSe2 could be completely quenched due to the charge transfer from the lowest unoccupied molecular orbital (LUMO) level of IEICO-4F to the conduction band minimum (CBM) of WSe2. Benefiting from the exquisite charge transfer behavior, the IEICO-4F/WSe2 heterojunction photodetector with optimized 6.0-nm thick IEICO-4F shows high performance including the responsivity of 8.32 A/W and specific detectivity of 4.65 × 1011 Jones at incident light of 808 nm. This work demonstrates a simple approach based on PL characteristics to design high-performance IEICO-4F/WSe2 heterojunction, thus paving the way for the development of excellent optoelectronic devices based on organic/TMD heterostructures.}
}