@article{Hou2022, 
author = {Shijun Hou and Zhengfeng Guo and Tao Xiong and Xingang Wang and Juehan Yang and Yue-Yang Liu and Zhi-Chuan Niu and Shiyuan Liu and Bing Liu and Shenqiang Zhai and Honggang Gu and Zhongming Wei},
title = {Optical and electronic anisotropy of a 2D semiconductor SiP},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {9},
pages = {8579-8586},
keywords = {two-dimensional materials, optical anisotropy, SiP, electrical anisotropy, photoelectronic properties},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4481-5},
doi = {10.1007/s12274-022-4481-5},
abstract = {Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements, which is a very important and popular research direction at present. As a IV-V two-dimensional material, silicon phosphide (SiP) has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy properties. Herein, the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy, and its electrical anisotropy is tested by SiP-based field-effect transistor. In addition, the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring it. In various measurements, SiP exhibits obvious anisotropy and good photoelectric performance. This work provides basic optical, electrical, and photoelectric performance information of SiP, and lays a foundation for further study of SiP and applications of SiP-based devices.}
}