@article{Luo2022, 
author = {Qingqing Luo and Guangyuan Feng and Yaru Song and Enbing Zhang and Jiangyan Yuan and Dejuan Fa and Qisheng Sun and Shengbin Lei and Wenping Hu},
title = {2D-polyimide film sensitized monolayer MoS2 phototransistor enabled near-infrared photodetection},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {9},
pages = {8428-8434},
keywords = {MoS2, heterojunction, polyimide film, near-infrared phototransistor},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4438-8},
doi = {10.1007/s12274-022-4438-8},
abstract = {Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a MoS2–2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × 1012 Jones, a photogain 1.04 × 105, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 μW/cm2), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to MoS2. The face-to-face spatial configuration of MoS2–2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs.}
}