TY  - JOUR
AU  - Luo, Qingqing
AU  - Feng, Guangyuan
AU  - Song, Yaru
AU  - Zhang, Enbing
AU  - Yuan, Jiangyan
AU  - Fa, Dejuan
AU  - Sun, Qisheng
AU  - Lei, Shengbin
AU  - Hu, Wenping
PY  - 2022
TI  - 2D-polyimide film sensitized monolayer MoS2 phototransistor enabled near-infrared photodetection
JO  - Nano Research
SN  - 1998-0124
SP  - 8428
EP  - 8434
VL  - 15
IS  - 9
AB  - Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a MoS2–2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × 1012 Jones, a photogain 1.04 × 105, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 μW/cm2), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to MoS2. The face-to-face spatial configuration of MoS2–2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs.
UR  - https://doi.org/10.1007/s12274-022-4438-8
DO  - 10.1007/s12274-022-4438-8