@article{Cao2022, 
author = {Gang Cao and Chao Gao and Jingjuan Wang and Jinling Lan and Xiaobing Yan},
title = {Memristor based on two-dimensional titania nanosheets for multi-level storage and information processing},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {9},
pages = {8419-8427},
keywords = {memristor, low power, information processing, titania nanosheets, multi-level storage},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4437-9},
doi = {10.1007/s12274-022-4437-9},
abstract = {A huge amount of data requires the non-volatile memory (NVM) technology to exhibit large-capacity storage and fast calculation speed. To further solve the bottleneck of storage capacity and speed, nano-memristors based on two-dimensional (2D) layered materials are expected to realize NVM. This study proposes the fabrication of an Ag/2D-TiOx/Pt high-performance memristor device based on the 2D titania nanosheet material. The device demonstrates stable electrical characteristics under the direct current (DC) mode, including bipolar resistive switching (RS) behavior, multi-level memristive modes, and retention property. Also, it exhibits low switching voltage (0.42 V/–0.2 V), high ROFF/RON resistance ratio (105), low switching power (10–9 W/10−5 W), and fast response speed. More importantly, the device realizes information encoding and decoding through a multi-level storage performed by different compliance currents. Multiple devices are connected to the actual circuit to realize a storage function with information processing and programmable characteristics. This work provides a powerful platform for the 2D titania nanosheet application in NVM and information processing.}
}