@article{Wang2022, 
author = {Haiyang Wang and Ranran Niu and Jianhui Liu and Sheng Guo and Yongpeng Yang and Zhongyi Liu and Jun Li},
title = {Electrostatic self-assembly of 2D/2D CoWO4/g-C3N4 p–n heterojunction for improved photocatalytic hydrogen evolution: Built-in electric field modulated charge separation and mechanism unveiling},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {8},
pages = {6987-6998},
keywords = {p–n junction, interfacial charge transfer, two-dimensional/two-dimensional, photocatalytic H2 generation, CoWO4/g-C3N4 heterojunction},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4329-z},
doi = {10.1007/s12274-022-4329-z},
abstract = {Two-dimensional (2D) semiconductor heterojunctions are considered as an effective strategy to achieve fast separation of photoinduced carriers. Herein, a novel CoWO4/g-C3N4 (CWO/CN) p–n junction was synthesized using an electrostatic self-assembly method. The constructed 2D/2D p–n heterostructure had a rich hetero-interface, increased charge density, and fast separation efficiency of photoinduced carriers. The in-situ Kelvin probe force microscopy confirmed that the separation pathway of photoinduced carriers through the interface obeyed an II-scheme charge transfer mechanism. Experimental results and density functional theory calculations indicated the differences of work function between CWO and CN induced the generation of built-in electric field, ensuring an efficient separation and transfer process of photoinduced carriers. Under the optimized conditions, the CWO/CN heterojunction displayed enhanced photocatalytic H2 generation activity under full spectrum and visible lights irradiation, respectively. Our study provides a novel approach to design 2D/2D hetero-structured photocatalysts based on p–n type semiconductor for photocatalytic H2 generation.}
}