@article{Wu2019, 
author = {Wenzhou Wu and Zhi Liu and Jun Zheng and Yuhua Zuo and Buwen Cheng},
title = {Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes},
year = {2019},
journal = {Tsinghua Science and Technology},
volume = {24},
number = {1},
pages = {1-8},
keywords = {avalanche photodiodes, lateral structure, electric field confinement, high gain},
url = {https://www.sciopen.com/article/10.26599/TST.2018.9010065},
doi = {10.26599/TST.2018.9010065},
abstract = {A novel lateral Ge /Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge /Si interface in the vertical direction. Modulating the Si mesa thickness ( 0-0.4⁢μ⁢m) and impurity concentration of the intrinsic Si substrate ( 1×1016-4×1016⁢cm-3) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is  0.3⁢μ⁢m, and the impurity concentration of the Si substrate is  2×1016⁢cm-3, the Lateral Avalanche PhotoDiode (LAPD) exhibits a peak gain of  246 under  1.55⁢μ⁢m incident light power of  -22.2⁢dBm, which increases with decreasing light intensity.}
}