@article{Li2014, 
author = {Yize Stephanie Li and Jun Ge and Jinhua Cai and Jie Zhang and Wei Lu and Jia Liu and Liwei Chen},
title = {Contactless probing of the intrinsic carrier transport in single-walled carbon nanotubes},
year = {2014},
journal = {Nano Research},
volume = {7},
number = {11},
pages = {1623-1630},
keywords = {field-effect transistor, single-walled carbon nanotubes, carrier mobility, electronic transport, carrier density, dielectric force microscopy},
url = {https://www.sciopen.com/article/10.1007/s12274-014-0522-z},
doi = {10.1007/s12274-014-0522-z},
abstract = {Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes: The contactless dielectric force microscopy (DFM) technique and the conventional field-effect transistor (FET) method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.}
}