@article{Li2014, 
author = {Wenqing Li and Lei Liao and Xiangheng Xiao and Xinyue Zhao and Zhigao Dai and Shishang Guo and Wei Wu and Ying Shi and Jinxia Xu and Feng Ren and Changzhong Jiang},
title = {Modulating the threshold voltage of oxide nanowire field-effect transistors by a Ga+ ion beam},
year = {2014},
journal = {Nano Research},
volume = {7},
number = {11},
pages = {1691-1698},
keywords = {nanowire, field-effect transistor, ion irradiation, threshold voltage},
url = {https://www.sciopen.com/article/10.1007/s12274-014-0529-5},
doi = {10.1007/s12274-014-0529-5},
abstract = {In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga+ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors (FETs) shift in the negative gate voltage direction after Ga+ ion irradiation. Smaller threshold voltages, achieved by Ga+ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga+ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to ~106. The results indicate that Ga+ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.}
}