@article{Zhang2014, 
author = {Zhi Zhang and Zhenyu Lu and Hongyi Xu and Pingping Chen and Wei Lu and Jin Zou},
title = {Structure and quality controlled growth of InAs nanowires through catalyst engineering},
year = {2014},
journal = {Nano Research},
volume = {7},
number = {11},
pages = {1640-1649},
keywords = {structure, molecular beam epitaxy (MBE), quality, InAs nanowires, Au catalysts},
url = {https://www.sciopen.com/article/10.1007/s12274-014-0524-x},
doi = {10.1007/s12274-014-0524-x},
abstract = {In this study, the structure and quality controlled growth of InAs nanowires using Au catalysts in a molecular beam epitaxy reactor is presented. By tuning the indium concentration in the catalyst, defect-free wurtzite structure and defect-free zinc blende structure InAs nanowires can be induced. It is found that these defect-free zinc blende structure InAs nanowires grow along < 110> directions with four low-energy {111} and two {110} side-wall facets and adopt the (111) catalyst/nanowire interface. Our structural and chemical characterization and calculations identify the existence of a catalyst supersaturation threshold for the InAs nanowire growth. When the In concentration in the catalyst is sufficiently high, defect-free zinc blende structure InAs nanowires can be induced. This study provides an insight into the manipulation of crystal structure and structure quality of Ⅲ-Ⅴ semiconductor nanowires through catalyst engineering.}
}