@article{Chen2022, 
author = {Xuexia Chen and Xun Yang and Qing Lou and Yuan Zhang and Yancheng Chen and Yacong Lu and Lin Dong and Chong-Xin Shan},
title = {Fabry-Perot interference and piezo-phototronic effect enhanced flexible MoS2 photodetector},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {5},
pages = {4395-4402},
keywords = {MoS2, piezo-phototronic effect, flexible photodetector, Fabry-Perot (F-P) interference},
url = {https://www.sciopen.com/article/10.1007/s12274-021-3989-4},
doi = {10.1007/s12274-021-3989-4},
abstract = {Flexible photodetectors (PDs) are indispensable components for next-generation wearable electronics. Recently, two-dimensional (2D) materials have been implemented as functional flexible optoelectronic devices due to their characteristics of atomically thin layers, excellent flexibility, and strain sensitivity. In this work, we developed a flexible photodetector based on MoS2/NiO heterojunction, and Fabry-Perot (F-P) and piezo-phototronic effect have been employed to enhance the responsivity (R) and external quantum efficiency (EQE) of the devices. The F-P effect is utilized to improve the optical absorption of the MoS2, resulting in an enhancement in the photoluminescence (PL) of monolayer MoS2 and the EQE of the photodetector by 30 and 130 times, respectively. The flexible photodetector exhibits an ultrahigh detectivity (D*) of 2.6 × 1014 Jones, which is the highest value ever reported for flexible MoS2 PDs. The piezo-potential of monolayer MoS2 decreases the valence band offset at the interface of MoS2/NiO, which increases the transfer efficiency of the photon-generated carriers significantly. Under 1.17% tensile strain, the R of the flexible photodetector can be enhanced by 271%. This research may provide a universal strategy for the design and performance optimization of 2D materials heterostructures for flexible optoelectronics.}
}