@article{Wang2022, 
author = {Cong Wang and Chao Xu and Xuyun Guo and Ning Zhang and Jianmin Yan and Jiewei Chen and Wei Yu and Jing-Kai Qin and Ye Zhu and Lain-Jong Li and Yang Chai},
title = {Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {6},
pages = {5712-5718},
keywords = {two-dimensional materials, aligned growth, tellurene, van der Waals interaction, epitaxy growth},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4188-7},
doi = {10.1007/s12274-022-4188-7},
abstract = {Group-VI elemental two-dimensional (2D) materials (e.g., tellurene (Te)) have unique crystalline structures and extraordinarily physical properties. However, it still remains a great challenge to controllably grow 2D Te with good repeatability, uniformity, and highly aligned orientation using vapor growth method. Here, we design a Cu foil-assisted alloy-buffer-controlled growth method to epitaxially grow aligned single-crystalline 2D Te on an insulating mica substrate. The in-situ formation of Cu-Te alloy plays a key role on 2D Te growth, alleviating the spatial and temporal non-uniformity of precursor in conventional vapor deposition process. Through transmission electron microscopy (TEM) analysis combined with theoretical calculations, we unveil that the alignment growth of Te in the [110] direction is along the [600] direction of mica, owing to the small lattice mismatch (0.15%) and strong binding strength. This work presents a method to grow aligned high-quality 2D Te in a controllable manner.}
}