@article{Li2022, 
author = {Zongge Li and Danni Wang and Huifang Li and Mang Ma and Ying Zhang and Zifeng Yan and Stefano Agnoli and Guoxin Zhang and Xiaoming Sun},
title = {Single-atom Zn for boosting supercapacitor performance},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {3},
pages = {1715-1724},
keywords = {supercapacitor, nitrogen doping, carbon nanomaterial, atomic dispersion, zinc doping},
url = {https://www.sciopen.com/article/10.1007/s12274-021-3839-4},
doi = {10.1007/s12274-021-3839-4},
abstract = {Single-atom metal-incorporated carbon nanomaterials (CMs) have shown great potential towards broad catalytic applications. In this work, we show that N-doped porous CMs embedded with redox-able Zn atoms exhibit superior capacitive performance. High Zn (~ 2.72 at.%)/N (~ 12.51 at.%) doping were realized by incorporating Zn2+ and benzamide into the condensation and carbonization of formamide and subsequent annealing at 900 °C. The Zn and N species are mutually benefited during the formation of ZnN4 motif. The as-obtained Zn1NC material affords a very large capacitance of 621 F·g−1 (at 0.1 A·g−1), superior rate capability (~ 65% retention at 100 A·g−1), and excellent cycling stability (0.00044% per cycle at 10 A·g−1). These merits are attributed to the high Zn/N loading, atomic Zn-boosted pseudocapacitive behavior, large specific surface area (~ 1,085 m2·g−1), and rich pore hierarchy, thus ensuring both large pseudo-capacitance (e.g., ~ 37.9% at 10 mV·s−1) and double-layer capacitance. Besides of establishing a new type of high Zn/N-loading carbon materials, our work uncovers the capacitive roles of atomically dispersed metals in CMs.}
}