@article{Zhao2017, 
author = {Jun Zhao and Wanlin Guo and Jing Ma},
title = {Tunable Rashba spin splitting in quantum-spin Hall-insulator AsF bilayers},
year = {2017},
journal = {Nano Research},
volume = {10},
number = {2},
pages = {491-502},
keywords = {electric field, topological insulator, Rashba spin splitting, bilayer AsF, tensile strain},
url = {https://www.sciopen.com/article/10.1007/s12274-016-1308-2},
doi = {10.1007/s12274-016-1308-2},
abstract = {Rashba spin splitting (RSS) in quantum-spin Hall (QSH) insulators is of special importance for fabricating spintronic devices. By changing the stacking order, a unique bilayered fluorinated arsenene (AsF) system is demonstrated to simultaneously possess RSS and non-trivial topological electronic states. We show by first-principle calculations that tunable RSS can be realized in bilayered AsF. Intrinsic RSS of 25 meV is obtained in the AA-stacked AsF bilayer by considering the spin-orbit coupling effect. The RSS can be tuned in the range of 0 to 50 meV by applying biaxial strains and can be significantly enhanced up to 186 meV in the presence of an external electric field. The AB-stacked AsF bilayer is shown to be a two-dimensional topological insulator with a sizable bulk bandgap of 140 meV (up to 240 meV), which originates from the spin-orbit coupling within the px, y–pz band inversion. Surprisingly, RSS up to 295 meV can be induced in the AB-stacked AsF bilayer by applying an external electric field, while the robust topology property without RSS can be retained under the applied strains. The AsF bilayers with tunable RSS and a nontrivial bandgap with AA- and AB-stacking orders can pave the way for designing spin field-effect transistors and new QSH devices.}
}