@article{Shin2022, 
author = {Hyeonwoo Shin and Sang-Joon Park and Byeong-Cheol Kang and Tae-Jun Ha},
title = {Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {2},
pages = {1524-1531},
keywords = {single-wall carbon nanotube, random networks, two-dimensional (2D) charge transport, time-domain transient measurements, charge trapping/de-trapping, shallow-/deep-traps},
url = {https://www.sciopen.com/article/10.1007/s12274-021-3697-0},
doi = {10.1007/s12274-021-3697-0},
abstract = {Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes (SWCNT-TFTs) is essential for further advances to improve the potential for various nanoelectronic applications. Herein, a comprehensive investigation of the two-dimensional (2D) charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K. To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs, an empirical equation was derived from a theoretical trapping model, and a carrier velocity distribution was determined from the differentiation of the transient response. Furthermore, charge trapping and de-trapping in shallow- and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate. The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.}
}