@article{Wang2022, 
author = {Weibiao Wang and Zhexue Chen and Xinyu Sui and Yueqi Li and Xinfeng Liu and Yong Zhang},
title = {Phase/size dual controlled 2D semiconductor In2X3 (X = S, Se, Te) for saturable absorption modulation},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {6},
pages = {5633-5639},
keywords = {photoluminescence, semiconductor, quantum sheets, intrinsic, nonlinear saturation absorption},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4171-3},
doi = {10.1007/s12274-022-4171-3},
abstract = {The production of two-dimensional nanosheets (2D NSs) with all sizes (1–100 nm) and few (< 10) layers is highly desired but far from satisfactory. Herein, we report an all-physical top-down method to produce indium chalcogenide (In2X3 (X = S, Se, Te)) NSs with wide-range (150–3.0 nm) controlled sizes. The method combines silica-assisted ball-milling and sonication-assisted solvent exfoliation to fabricate multiscale NSs with varying distributions, which are then precisely separated by cascade centrifugation. Multiple characterization techniques reveal that the as-produced In2X3 NSs are intrinsic and defect-free and remain β-phase during the whole process. The redispersions of In2X3 NSs exhibit prominent excitation wavelength-, solvent-, concentration-, and size-dependent photoluminescence. The NSs-poly(methyl methacrylate) (PMMA) hybrid thin films demonstrate strong size effects in nonlinear saturation absorption. The absolute modulation depths of 35.4%, 43.3%, 47.2% and saturation intensities of 1.63, 1.05, 0.83 MW·cm−2 (i.e., 163, 105, and 83 nJ·cm−2) are derived for the In2S3, In2Se3, and In2Te3 quantum sheets, respectively. Our method paves the way for mass production and full exploration of full-scale 2D NSs.}
}