@article{Liu2022, 
author = {Li Liu and Hao Wang and Qilong Wu and Kang Wu and Yuan Tian and Haitao Yang and Cheng Min Shen and Lihong Bao and Zhihui Qin and Hong-Jun Gao},
title = {Ferroelectric-gated ReS2 field-effect transistors for nonvolatile memory},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {6},
pages = {5443-5449},
keywords = {Ferroelectric, nonvolatile memory, ReS2, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4142-8},
doi = {10.1007/s12274-022-4142-8},
abstract = {Ferroelectric field-effect transistors (FeFET) with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology. Herein, we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS2 with ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films. The ReS2 FeFET using hBN as substrate shows a large memory window of ~ 30 V. Repeated write/erase operations are successfully performed by applying pulse voltage of ±25 V with 1 ms width to the ferroelectric P(VDF-TrFE), and an ultra-high write/erase ratio of ~ 107 can be achieved. Furthermore, the ReS2 FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 cycles. These characteristics highlight that such ferroelectric-gated nonvolatile memory has great potential in future non-volatile memory applications.}
}