@article{Luo2017, 
author = {Qing Luo and Xiaoxin Xu and Hangbing Lv and Tiancheng Gong and Shibing Long and Qi Liu and Ling Li and Ming Liu},
title = {Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array},
year = {2017},
journal = {Nano Research},
volume = {10},
number = {10},
pages = {3295-3302},
keywords = {crossbar array, selector, trapezoidal barrier, gradient oxygen concentration, high uniformity},
url = {https://www.sciopen.com/article/10.1007/s12274-017-1542-2},
doi = {10.1007/s12274-017-1542-2},
abstract = {Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the "sneaking current problem", which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaOx-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density (1 MA·cm–2), high selectivity (5 × 104), low off-state current (~10 pA), robust endurance (> 1010), self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor (1S1R) device exhibits high nonlinearity in the low resistance state (LRS), which is quite effective in solving the sneaking current issue.}
}