@article{Ye2017, 
author = {Gonglan Ye and Yongji Gong and Sidong Lei and Yongmin He and Bo Li and Xiang Zhang and Zehua Jin and Liangliang Dong and Jun Lou and Robert Vajtai and Wu Zhou and Pulickel M. Ajayan},
title = {Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition},
year = {2017},
journal = {Nano Research},
volume = {10},
number = {7},
pages = {2386-2394},
keywords = {metal dichalcogenides, tin disulfide, two-dimensional materials, chemical vapor deposition, photodetector},
url = {https://www.sciopen.com/article/10.1007/s12274-017-1436-3},
doi = {10.1007/s12274-017-1436-3},
abstract = {Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of ~2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition (CVD) growth of atomic-layer SnS2 with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.}
}