@article{Sun2021, 
author = {Jiamin Sun and Mingming Han and Meng Peng and Lei Zhang and Dong Liu and Chengcheng Miao and Jiafu Ye and Zhiyong Pang and Longbing He and Hailu Wang and Qing Li and Peng Wang and Lin Wang and Xiaoshuang Chen and Chongxin Shan and Litao Sun and Weida Hu and Zai-xing Yang},
title = {Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1-xSbx nanowires},
year = {2021},
journal = {Nano Research},
volume = {14},
number = {11},
pages = {3961-3968},
keywords = {GaAs1-xSbx nanowire, stoichiometry effect, full-composition-range, field-effect hole mobility, near-infrared photodetection},
url = {https://www.sciopen.com/article/10.1007/s12274-021-3321-3},
doi = {10.1007/s12274-021-3321-3},
abstract = {As one of the most important narrow bandgap ternary semiconductors, GaAs1-xSbx nanowires (NWs) have attracted extensive attention recently, due to the superior hole mobility and the tunable bandgap, which covers the whole near-infrared (NIR) region, for technological applications in next-generation high-performance electronics and NIR photodetection. However, it is still a challenge to the synthesis of high-quality GaAs1-xSbx NWs across the entire range of composition, resulting in the lack of correlation investigation among stoichiometry, microstructure, electronics, and NIR photodetection. Here, we demonstrate the success growth of high-quality GaAs1-xSbx NWs with full composition range by adopting a simple and low-cost surfactant-assisted solid source chemical vapor deposition method. All of the as-prepared NWs are uniform, smooth, and straight, without any phase segregation in all stoichiometric compositions. The lattice constants of each NW composition have been well correlated with the chemical stoichiometry and confirmed by high-resolution transmission electron microscopy, X-ray diffraction, and Raman spectrum. Moreover, with the increase of Sb concentration, the hole mobility of the as-fabricated field-effect-transistors and the responsivity and detectivity of the as-fabricated NIR photodetectors increase accordingly. All the results suggest a careful stoichiometric design is required for achieving optimal NW device performances.}
}