@article{Zhang2022, 
author = {Dan Zhang and Xiaojing Su and Hao Chang and Hao Xu and Xiaolei Wang and Xiaobin He and Junjie Li and Fei Zhao and Qide Yao and Yanna Luo and Xueli Ma and Hong Yang and Yongliang Li and Zhenhua Wu and Yajuan Su and Tao Yang and Yayi Wei and Anyan Du and Huilong Zhu and Junfeng Li and Huaxiang Yin and Jun Luo and Tianchun Ye and Wenwu Wang},
title = {Advanced Process and Electron Device Technology},
year = {2022},
journal = {Tsinghua Science and Technology},
volume = {27},
number = {3},
pages = {534-558},
keywords = {integrated circuits, advanced process, gate-all-around devices, three-dimensional (3D) integration, high-mobility channel},
url = {https://www.sciopen.com/article/10.26599/TST.2021.9010049},
doi = {10.26599/TST.2021.9010049},
abstract = {This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional (3D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore’s law will undoubtedly continue in the next 15 years.}
}