@article{Jin2022, 
author = {Tengyu Jin and Jing Gao and Yanan Wang and Yue Zheng and Shuo Sun and Lei Liu and Ming Lin and Wei Chen},
title = {Two-dimensional reconfigurable electronics enabled by asymmetric floating gate},
year = {2022},
journal = {Nano Research},
volume = {15},
number = {5},
pages = {4439-4447},
keywords = {two-dimensional (2D) materials, photodiode, homojunction, artificial synapse, reconfigurable device, 2-bit memory},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4070-7},
doi = {10.1007/s12274-022-4070-7},
abstract = {Reconfigurable devices with customized functionalities hold great potential in addressing the scaling limits of silicon-based field-effect transistors (FETs). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategies often lead to high power consumption and device complexity. Here, we report a reconfigurable WSe2 optoelectronic device that can function as photodiode, artificial synapse, and 2-bit memory in a single device, enabled by an asymmetric floating gate (AFG) that can continuously program the device into different homojunction modes. The lateral p−n homojunction formed in the AFG device exhibits high-performance self-powered photodetection, with a responsivity over 0.17 A·W−1 and a wide detection spectral range from violet to near-infrared region. The AFG device can also mimic synaptic features of biological synapses and achieve distinct potentiation/depression behaviors under the modulation of both drain-source bias and light illumination. Moreover, when working as a 2-bit memory via the transition between n−n+ and p−n homojunctions, the AFG device shows four distinct conductive states with a high on/off current ratio over 106 and good repeatability. Combining reduced processing complexity and reconfigurable functionalities, the WSe2 AFG devices demonstrate great potential towards high-performance photoelectric interconnected circuits.}
}