@article{Yang2014, 
author = {Rong Yang and Shuang Wu and Duoming Wang and Guibai Xie and Meng Cheng and Guole Wang and Wei Yang and Peng Chen and Dongxia Shi and Guangyu Zhang},
title = {Fabrication of high-quality all-graphene devices with low contact resistances},
year = {2014},
journal = {Nano Research},
volume = {7},
number = {10},
pages = {1449-1456},
keywords = {graphene, contact resistance, all-graphene devices, thinning},
url = {https://www.sciopen.com/article/10.1007/s12274-014-0504-1},
doi = {10.1007/s12274-014-0504-1},
abstract = {All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature (RT) between a bilayer graphene channel and a multilayer graphene electrode can be as low as ~5 Ω·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.}
}