@article{Wu2012, 
author = {Justin Wu and Liming Xie and Guosong Hong and Hong En Lim and Boanerges Thendie and Yasumitsu Miyata and Hisanori Shinohara and Hongjie Dai},
title = {Short Channel Field-Effect Transistors from Highly Enriched Semiconducting Carbon Nanotubes},
year = {2012},
journal = {Nano Research},
volume = {5},
number = {6},
pages = {388-394},
keywords = {Raman spectroscopy, field-effect transistor, separation, Single-walled carbon nanotubes},
url = {https://www.sciopen.com/article/10.1007/s12274-012-0219-0},
doi = {10.1007/s12274-012-0219-0},
abstract = {Semiconducting single-walled carbon nanotubes (s-SWNTs) with a purity of ~98% have been obtained by gel filtration of arc-discharge grown SWNTs with diameters in the range 1.2–1.6 nm. Multi-laser Raman spectroscopy confirmed the presence of less than 2% of metallic SWNTs (m-SWNTs) in the s-SWNT enriched sample. Measurement of ~50 individual tubes in Pd-contacted devices with channel length 200 nm showed on/off ratios of > 104, conductances of 1.38–5.8 μS, and mobilities in the range 40–150 cm2/(V·s). Short channel multi-tube devices with ~100 tubes showed lower on/off ratios due to residual m-SWNTs, although the on-current was greatly increased relative to the devices made from individual tubes.}
}