@article{Moon2018, 
author = {Jeongje Moon and Yoonjoong Kim and Doohyeok Lim and Kyeungmin Im and Sangsig Kim},
title = {Silicon nanowire ratioed inverters on bendable substrates},
year = {2018},
journal = {Nano Research},
volume = {11},
number = {5},
pages = {2586-2591},
keywords = {silicon nanowire, bendable substrate, ratioed inverter, n-MOS inverter, p-MOS inverter},
url = {https://www.sciopen.com/article/10.1007/s12274-017-1884-9},
doi = {10.1007/s12274-017-1884-9},
abstract = {In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics.}
}