@article{Li2018, 
author = {Hong Li and Jun Tie and Jingzhen Li and Meng Ye and Han Zhang and Xiuying Zhang and Yuanyuan Pan and Yangyang Wang and Ruge Quhe and Feng Pan and Jing Lu},
title = {High-performance sub-10-nm monolayer black phosphorene tunneling transistors},
year = {2018},
journal = {Nano Research},
volume = {11},
number = {5},
pages = {2658-2668},
keywords = {black phosphorene, tunneling field-effect transistor, device performance, ab initio quantum transport simulation},
url = {https://www.sciopen.com/article/10.1007/s12274-017-1895-6},
doi = {10.1007/s12274-017-1895-6},
abstract = {Moore's law is approaching its physical limit. Tunneling field-effect transistors (TFETs) based on 2D materials provide a possible scheme to extend Moore's lawdown to the sub-10-nm region owing to the electrostatic integrity and absence of dangling bonds in 2D materials. We report an ab initio quantum transport study on the device performance of monolayer (ML) black phosphorene (BP)TFETs in the sub-10-nm scale (6–10 nm). Under the optimal schemes, the ML BP TFETs show excellent device performance along the armchair transport direction.The on-state current, delay time, and power dissipation of the optimal sub-10-nm ML BP TFETs significantly surpass the latest International Technology Roadmap for Semiconductors (ITRS) requirements for high-performance devices. The subthreshold swings are 56–100 mV/dec, which are much lower than those of their Schottky barrier and metal oxide semiconductor field-effect transistor counterparts.}
}