@article{Kim2019, 
author = {Jong-Hyun Kim and Sang Hyo Kweon and Sahn Nahm},
title = {Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications},
year = {2019},
journal = {Nano Research},
volume = {12},
number = {10},
pages = {2559-2567},
keywords = {lead-free piezoelectric thin films, low-temperature-deposition process, two-dimensional (2D) nanosheet seed-layers, polymer substrates},
url = {https://www.sciopen.com/article/10.1007/s12274-019-2486-5},
doi = {10.1007/s12274-019-2486-5},
abstract = {A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1-xKx)NbO3 (NKN) film at 350 ℃. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 ℃, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pm·V-1, and a leakage current density of 6.47 × 10-7 A·cm-2 at -0.2 MV·cm-1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 ℃. Hence, the NKN films grown on the SNO seed-layer at 350 ℃ can be applied to electronic devices with flexible polymer substrates.}
}