@article{Gao2021, 
author = {Xiangxiang Gao and Jun Yin and Gang Bian and Hai-Yang Liu and Chao-Peng Wang and Xi-Xi Pang and Jian Zhu},
title = {High-mobility patternable MoS2 percolating nanofilms},
year = {2021},
journal = {Nano Research},
volume = {14},
number = {7},
pages = {2255-2263},
keywords = {molybdenum disulfide, field-effect transistors, layer-by-layer assembly, nanofilms, solution-processed electronics},
url = {https://www.sciopen.com/article/10.1007/s12274-020-3218-6},
doi = {10.1007/s12274-020-3218-6},
abstract = {Fabrication of large-area and uniform semiconducting thin films of two-dimensional (2D) materials is paramount for the full exploitation of their atomic thicknesses and smooth surfaces in integrated circuits. In addition to elaborate vapor-based synthesis techniques for the wafer-scale growth of 2D films, solution-based approaches for high-quality thin films from the liquid dispersions of 2D flakes, despite underdeveloped, are alternative cost-effective tactics. Here, we present layer-by-layer (LbL) assembly as an effective approach to obtaining scalable semiconducting films of molybdenum disulfide (MoS2) for field-effect transistors (FETs). LbL assembly is achieved by coordinating electrochemically exfoliated MoS2 with cationic poly (diallyldimethylammonium chloride) (PDDA) through electrostatic interactions. The PDDA/MoS2 percolating nanofilms show controlled and self-limited growth on a variety of substrates, and are easily patterned through lift-off processes. Ion gel gated FETs are fabricated on these MoS2 nanofilms, and they show mobilities of 9.8 cm2·V-1·s-1, on/off ratios of 2.1 × 105 with operating voltages less than 2 V. The annealing temperature in the fabrication process can be as low as 200 °C, thereby permitting the fabrication of flexible FETs on polyethylene terephthalate substrates. The LbL assembly technique holds great promise for the large-scale fabrication of flexible electronics based on solution-processed 2D semiconductors.}
}