@article{Lai2008, 
author = {Elaine Lai and Woong Kim and Peidong Yang},
title = {Vertical Nanowire Array-Based Light Emitting Diodes},
year = {2008},
journal = {Nano Research},
volume = {1},
number = {2},
pages = {123-128},
keywords = {LED, electroluminescence, ZnO nanowire, waveguiding},
url = {https://www.sciopen.com/article/10.1007/s12274-008-8017-4},
doi = {10.1007/s12274-008-8017-4},
abstract = {Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal–organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current–voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.}
}