@article{He2009, 
author = {Xiaoli He and Guowen Meng and Xiaoguang Zhu and Mingguang Kong},
title = {Synthesis of Vertically Oriented GaN Nanowires on a LiAlO2 Substrate via Chemical Vapor Deposition},
year = {2009},
journal = {Nano Research},
volume = {2},
number = {4},
pages = {321-326},
keywords = {chemical vapor deposition, photoluminescence, GaN, LiAlO2, triangular cross-section, vapor–liquid–solid},
url = {https://www.sciopen.com/article/10.1007/s12274-009-9029-4},
doi = {10.1007/s12274-009-9029-4},
abstract = {Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on a γ-LiAlO2 (100) substrate coated with a Au layer, via a chemical vapor deposition process at 1000 ℃ using gallium and ammonia as source materials. The GaN NWs grow along the nonpolar [1010] direction with steeply tapering tips, and have triangular cross-sections with widths of 50–100 nm and lengths of up to several microns. The GaN NWs are formed by a vapor–liquid–solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process. The aligned GaN NWs show blue-yellow emission originating from defect levels, residual impurities or surface states of the GaN NWs, and have potential applications in nanotechnology.}
}