@article{Dai2020, 
author = {Chen Dai and Bo Li and Jia Li and Bei Zhao and Ruixia Wu and Huifang Ma and Xidong Duan},
title = {Controllable synthesis of NiS and NiS2 nanoplates by chemical vapor deposition},
year = {2020},
journal = {Nano Research},
volume = {13},
number = {9},
pages = {2506-2511},
keywords = {chemical vapor deposition, high conductivity, two-dimensional (2D) non-layerd materials, multi stoichiometrics, nickel sulfides},
url = {https://www.sciopen.com/article/10.1007/s12274-020-2887-5},
doi = {10.1007/s12274-020-2887-5},
abstract = {Mulitipe stoichiometric ratio of two-dimensional (2D) transition metal dichalcogenides (TMDCs) attracted considerable interest for their unique chemical and physical properties. Here we developed a chemical vapor deposition (CVD) method to controllably synthesize ultrathin NiS and NiS2 nanoplates. By tuning the growth temperature and the amounts of the sulfur powder, 2D non-layered NiS and NiS2 nanoplates can be selectively prepared with the thickness of 2.0 and 7.0 nm, respectively. X-ray diffraction (XRD) and transmission electron microscopy (TEM) characterization reveal that the 2D NiS and NiS2 nanoplates are high-quality single crystals in the hexagonal and cubic phase, respectively. Electrical transport studies show that electrical conductivities of the 2D NiS and NiS2 nanoplates are as high as 4.6 × 105 and 6.3 × 105 S·m-1, respectively. The electrical results demonstrate that the synthesized metallic NiS and NiS2 could serve as good electrodes in 2D electronics.}
}