@article{Geng2016, 
author = {Xiangshun Geng and Yongqiang Yu and Xiaoli Zhou and Chunde Wang and Kewei Xu and Yan Zhang and Chunyan Wu and Li Wang and Yang Jiang and Qing Yang},
title = {Design and construction of ultra-thin MoSe2 nanosheet-based heterojunction for high-speed and low-noise photodetection},
year = {2016},
journal = {Nano Research},
volume = {9},
number = {9},
pages = {2641-2651},
keywords = {heterojunction, molybdenum diselenide, layer transition metal dichalcogenide (TMD), urtrathin nanosheet, ultrafast photoresponse},
url = {https://www.sciopen.com/article/10.1007/s12274-016-1151-5},
doi = {10.1007/s12274-016-1151-5},
abstract = {Advances in the photocurrent conversion of two-dimensional (2D) transition metal dichalcogenides have enabled the realization and application of ultrasensitive and broad-spectral photodetectors. The requirements of previous devices constantly drive for complex technological implementation, resulting in limits in scale and complexity. Furthermore, the development of large-area and low-cost photodetectors would be beneficial for applications. Therefore, we demonstrate a novel design of a heterojunction photodetector based on solution-processed ultrathin MoSe2 nanosheets to satisfy the requirements of its application. The photodetector exhibits a high sensitivity to visible–near infrared light, with a linear dynamic range over 124 decibels (dB), a detectivity of ~1.2 × 1012 Jones, and noise current approaching 0.1 pA·Hz–1/2 at zero bias. Significantly, the device shows an ultra-high response speed up to 30 ns with a 3-dB predicted bandwidth over 32 MHz, which is far better than that of most of the 2D nanostructured and solution-processable photodetectors reported thus far and is comparable to that of commercial Si photodetectors. Combining our results with material-preparation methods, together with the methodology of device fabrication presented herein, can provide a pathway for the large-area integration of low-cost, high-speed photodetectors.}
}