@article{Kim2018, 
author = {Hyung-Jun Kim and Suk Yang and Hojoong Kim and Jin Young Moon and Kyung Park and Yun-Jin Park and Jang-Yeon Kwon},
title = {Enhanced electrical and optical properties of single-layered MoS2 by incorporation of aluminum},
year = {2018},
journal = {Nano Research},
volume = {11},
number = {2},
pages = {731-740},
keywords = {MoS2, aluminum, incorporation, chemical vapor deposition, atomic layer deposition},
url = {https://www.sciopen.com/article/10.1007/s12274-017-1682-4},
doi = {10.1007/s12274-017-1682-4},
abstract = {Electrical and optical enhancements of single-layer semiconducting materials such as transition metal dichalcogenides have recently been studied to achieve sensitive properties via external treatments, such as the formation of organic/inorganic protecting layers on field-effect transistors (FETs), thermal annealing, and nano-dot doping of sensors and detectors. Here, we propose a new analytical approach to electrical and optical enhancement through a passivation process using atomic layer deposition (ALD), and demonstrate a synthesized MoS2 monolayer incorporated with Al atoms in an Al2O3 passivation layer. The incorporated Al atoms in the MoS2 monolayer are clearly observed by spherical aberration-corrected scanning transmission electron microscopy (Cs-STEM) and TEM-energy-dispersive X-ray spectroscopy results. We demonstrate that the chemically incorporated FETs exhibit highly enhanced mobilities of approximately 3.7 cm2·V-1·s-1, forty times greater than that of as-synthesized MoS2, with a three-fold improvement in the photoluminescence properties.}
}