@article{Li2015, 
author = {Wenbin Li and Ju Li},
title = {Piezoelectricity in two-dimensional group-Ⅲ monochalcogenides},
year = {2015},
journal = {Nano Research},
volume = {8},
number = {12},
pages = {3796-3802},
keywords = {two-dimensional (2D) material, density functional theory (DFT) calculation, piezoelectricity, monochalcogenide},
url = {https://www.sciopen.com/article/10.1007/s12274-015-0878-8},
doi = {10.1007/s12274-015-0878-8},
abstract = {It is found that several layer-phase group-Ⅲ monochalcogenides, including GaS, GaSe, and InSe, are piezoelectric in their monolayer form. First-principles calculations reveal that the piezoelectric coefficients of monolayer GaS, GaSe, and InSe (2.06, 2.30, and 1.46 pm·V-1) are of the same order of magnitude as previously discovered two-dimensional (2D) piezoelectric materials such as boron nitride (BN) and MoS2 monolayers. This study therefore indicates that a strong piezoelectric response can be obtained in a wide range of two-dimensional materials with broken inversion symmetry. The co-existence of piezoelectricity and superior photo-sensitivity in these monochalcogenide monolayer semiconductors means they have the potential to allow for the integration of electromechanical and optical sensors on the same material platform.}
}