@article{YU2021, 
author = {Kemeng YU and Kun ZOU and Haojie LANG and Yitian PENG},
title = {Nanofriction characteristics of h-BN with electric field induced electrostatic interaction},
year = {2021},
journal = {Friction},
volume = {9},
number = {6},
pages = {1492-1503},
keywords = {nanofriction, electrostatic interaction, bias voltage, h-BN, atomic force microscopy},
url = {https://www.sciopen.com/article/10.1007/s40544-020-0432-x},
doi = {10.1007/s40544-020-0432-x},
abstract = {The nanofriction properties of hexagonal boron nitride (h-BN) are vital for its application as a substrate for graphene devices and solid lubricants in micro- and nano-electromechanical devices. In this work, the nanofriction characteristics of h-BN on Si/SiO2 substrates with a bias voltage are explored using a conductive atomic force microscopy (AFM) tip sliding on the h-BN surface under different substrate bias voltages. The results show that the nanofriction on h-BN increases with an increase in the applied bias difference (Vt-s) between the conductive tip and the substrate. The nanofriction under negative Vt-s is larger than that under positive Vt-s. The variation in nanofriction is relevant to the electrostatic interaction caused by the charging effect. The electrostatic force between opposite charges localized on the conductive tip and at the SiO2/Si interface increases with an increase in Vt-s. Owing to the characteristics of p-type silicon, a positive Vt-s will first cause depletion of majority carriers, which results in a difference of nanofriction under positive and negative Vt-s. Our findings provide an approach for manipulating the nanofriction of 2D insulating material surfaces through an applied electric field, and are helpful for designing a substrate for graphene devices.}
}