@article{Zhu2015, 
author = {Lifeng Zhu and Junyan Xiao and Jiangjian Shi and Junjie Wang and Songtao Lv and Yuzhuan Xu and Yanhong Luo and Yin Xiao and Shirong Wang and Qingbo Meng and Xianggao Li and Dongmei Li},
title = {Efficient CH3NH3PbI3 perovskite solar cells with 2TPA-n-DP hole-transporting layers},
year = {2015},
journal = {Nano Research},
volume = {8},
number = {4},
pages = {1116-1127},
keywords = {perovskite solar cells, hole-transporting materials, organolead halide, interfacial recombination},
url = {https://www.sciopen.com/article/10.1007/s12274-014-0592-y},
doi = {10.1007/s12274-014-0592-y},
abstract = {CH3NH3PbI3 perovskite solar cells with 2TPA-n-DP (TPA = 4, 4′-((1E, 1′E, 3E, 3′E)-[1, 1′-biphenyl]-4, 4′-diylbis(buta-1, 3-diene-4, 1-diyl)); DP = bis(N, N-di-p-tolylaniline); n = 1, 2, 3, 4) as hole-transporting materials (HTMs) have been fabricated. After optimization of the mesoporous TiO2 film thickness, devices based on 2TPA-2-DP with power conversion efficiencies (PCEs) of up to 12.96% have been achieved, comparable to those of devices with (2, 2′, 7, 7′-tetrakis(N, N-di-p-methoxyphenylamine)-9, 9′-spirobifluorene) (spiro-OMeTAD) as HTM under similar conditions. Further time-resolved photoluminescence (PL) measurements showed a fast charge transfer process at the perovskite/2TPA-2-DP interface. With the aid of electrochemical impedance spectra, a study of the electron blocking ability of 2TPA-2-DP in the device reveals that the presence of 2TPA-2-DP can greatly increase charge transfer resistance at the HTM/Au interface in the device, thus reducing the recombination. Furthermore, the perovskite solar cells based on these four HTMs exhibit good stability after testing for one month.}
}