@article{Yu2015, 
author = {Yong-Qiang Yu and Lin-Bao Luo and Ming-Zheng Wang and Bo Wang and Long-Hui Zeng and Chun-Yan Wu and Jian-Sheng Jie and Jian-Wei Liu and Li Wang and Shu-Hong Yu},
title = {Interfacial state induced ultrasensitive ultraviolet light photodetector with resolved flux down to 85 photons per second},
year = {2015},
journal = {Nano Research},
volume = {8},
number = {4},
pages = {1098-1107},
keywords = {Ⅱ-Ⅵ group, detectivity, Schottky barrier diode, optoelectronic device, interfacial states},
url = {https://www.sciopen.com/article/10.1007/s12274-014-0587-8},
doi = {10.1007/s12274-014-0587-8},
abstract = {We present an ultrasensitive ultraviolet (UV) detector based on a p-type ZnS nanoribbon (NR)/indium tin oxide (ITO) Schottky barrier diode (SBD). The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10-17 W (~85 photons/s on the NR) at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 1020 cm·Hz1/2·W-1 and 6.6 × 105, respectively. It is found that the presence of the trapping states at the p-ZnS NR/ITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developing high-performance optoelectronic devices in the future.}
}