@article{Nadar2015, 
author = {Salman Nadar and Chloé Rolland and Jean-François Lampin and Xavier Wallart and Philippe Caroff and Renaud Leturcq},
title = {Tunnel junctions in a III–V nanowire by surface engineering},
year = {2015},
journal = {Nano Research},
volume = {8},
number = {3},
pages = {980-989},
keywords = {semiconductor nanowire, tunnel junction, indium arsenide compounds, doping, Ⅲ-Ⅴ semiconductors},
url = {https://www.sciopen.com/article/10.1007/s12274-014-0579-8},
doi = {10.1007/s12274-014-0579-8},
abstract = {We demonstrate a simple way of fabricating high performance tunnel devices from p-doped InAs nanowires by tailoring the n-doped surface accumulation layer inherent to InAs surfaces. By using appropriate ammonium sulfide based surface passivation before metallization without any further thermal treatment, we demonstrate characteristics of tunnel p-n junctions, namely Esaki and backward diodes, with figures of merit better than previously published for InAs homojunctions. The further optimization of both the surface doping, in a quantitative way, and the device geometry allows us to demonstrate that these nanowire-based technologically-simple diodes have promising direct current characteristics for integrated high frequency detection or generation.}
}