@article{Xiang2016, 
author = {Shaohua Xiang and Vaidotas Miseikis and Luca Planat and Stefano Guiducci and Stefano Roddaro and Camilla Coletti and Fabio Beltram and Stefan Heun},
title = {Low-temperature quantum transport in CVD-grown single crystal graphene},
year = {2016},
journal = {Nano Research},
volume = {9},
number = {6},
pages = {1823-1830},
keywords = {high-quality chemical vapor deposition (CVD)-graphene, low-temperature magnetotransport, quantum Hall effect, weak localization},
url = {https://www.sciopen.com/article/10.1007/s12274-016-1075-0},
doi = {10.1007/s12274-016-1075-0},
abstract = {Chemical vapor deposition (CVD) is typically used for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. Therefore, we present a detailed study on the electronic properties of high-quality single-crystal monolayer graphene. The graphene is grown via CVD on copper, by using a cold-wall reactor, and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples occurs at back-gate voltages lower than 10 V, and a maximum mobility of 11, 000 cm2/(V·s) is attained. More than 12 flat and discernible half-integer quantum Hall plateaus occur under a high magnetic field on both the electron and hole sides of the Dirac point. At a low magnetic field, the magnetoresistance exhibits a weak localization peak. Using the theory of McCann et al., we obtain inelastic scattering lengths of > 1 μm, even at the charge neutrality point of the samples.}
}