@article{Wang2016, 
author = {Xiaoting Wang and Le Huang and Yuting Peng and Nengjie Huo and Kedi Wu and Congxin Xia and Zhongming Wei and Sefaattin Tongay and Jingbo Li},
title = {Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions},
year = {2016},
journal = {Nano Research},
volume = {9},
number = {2},
pages = {507-516},
keywords = {optoelectronic properties, ReSe2/MoS2, van der Waals heterojunction, rectification},
url = {https://www.sciopen.com/article/10.1007/s12274-015-0932-6},
doi = {10.1007/s12274-015-0932-6},
abstract = {Van der Waals (vdW) heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor (FET) compared with the individual components, and a high current responsivity (Rλ) and external quantum efficiency (EQE) of 6.75 A/W and 1, 266%, respectively, for the photodetector.}
}