@article{Lin2018, 
author = {Haicheng Lin and Wantong Huang and Kun Zhao and Chaosheng Lian and Wenhui Duan and Xi Chen and Shuai-Hua Ji},
title = {Growth of atomically thick transition metal sulfide filmson graphene/6H-SiC(0001) by molecular beam epitaxy},
year = {2018},
journal = {Nano Research},
volume = {11},
number = {9},
pages = {4722-4727},
keywords = {two-dimensional (2D) materials, charge density wave, molecular beam epitaxy, NbS2, TaS2, FeS},
url = {https://www.sciopen.com/article/10.1007/s12274-018-2054-4},
doi = {10.1007/s12274-018-2054-4},
abstract = {We report the growth and characterization of atomically thick NbS2, TaS2, and FeS films on a 6H-SiC(0001) substrate terminated with monolayer or bilayer epitaxial graphene. The crystal and electronic structures are studied by scanning tunneling microscopy and reflection high-energy electron diffraction. The NbS2 monolayer is solely in the 2H structure, while the TaS2 monolayer contains both 1T and 2H structures. Charge-density waves are observed in all phases. For the FeS films, the tetragonal structure coexists with the hexagonal one and no superconductivity is observed.}
}