@article{Jin2018, 
author = {Zhepeng Jin and Zhi Cai and Xiaosong Chen and Dacheng Wei},
title = {Abnormal n-type doping effect in nitrogen-doped tungsten diselenide prepared by moderate ammonia plasma treatment},
year = {2018},
journal = {Nano Research},
volume = {11},
number = {9},
pages = {4923-4930},
keywords = {nitrogen-doped, tungsten diselenide, n-type doping, ammonia plasma, anion vacancy},
url = {https://www.sciopen.com/article/10.1007/s12274-018-2087-8},
doi = {10.1007/s12274-018-2087-8},
abstract = {To facilitate potential applications of tungsten diselenide (WSe2) in electronics, controllable doping is of great importance. As an industrially compatible technology, plasma treatment has been used to dope two-dimensional (2D) materials. However, owing to the strong etching effect in transition metal dichalcogenides (TMDCs), it is difficult to controllably dope 2D WSe2 crystals by plasma. Herein, we develop a moderate ammonia plasma treatment method to prepare nitrogen-doped WSe2 with controlled nitrogen content. Interestingly, Raman, photoluminescence, X-ray photoelectron spectroscopy, and electrical measurements reveal abnormal n-doping behavior of nitrogen-doped WSe2, which is attributed to selenium anion vacancy introduced by hydrogen species in ammonia plasma. Nitrogen-doped WSe2 with abnormal n-doping behavior has potential applications in future TMDCs-based electronics.}
}