@article{Scalise2012, 
author = {Emilio Scalise and Michel Houssa and Geoffrey Pourtois and Valery Afanas'ev and and André Stesmans},
title = {Strain-Induced Semiconductor to Metal Transition in the Two-Dimensional Honeycomb Structure of MoS2},
year = {2012},
journal = {Nano Research},
volume = {5},
number = {1},
pages = {43-48},
keywords = {MoS2, quasi-2D chalcogenide materials, first-principles modeling, strain-induced semiconductor to metal transition},
url = {https://www.sciopen.com/article/10.1007/s12274-011-0183-0},
doi = {10.1007/s12274-011-0183-0},
abstract = {The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS2, the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS2.}
}