TY  - JOUR
AU  - Wang, Xiangzhuo
AU  - Yang, Huixia
AU  - Yang, Rong
AU  - Wang, Qinsheng
AU  - Zheng, Jingchuan
AU  - Qiao, Lu
AU  - Peng, Xianglin
AU  - Li, Yongkai
AU  - Chen, Dongyun
AU  - Xiong, Xiaolu
AU  - Duan, Junxi
AU  - Zhang, Guangyu
AU  - Ma, Jie
AU  - Han, Junfeng
AU  - Xiao, Wende
AU  - Yao, Yugui
PY  - 2019
TI  - Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations
JO  - Nano Research
SN  - 1998-0124
SP  - 1900
EP  - 1905
VL  - 12
IS  - 8
AB  - The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the interlayer coupling in layer-structured materials, inducing additional complexity in layer stacking and thus novel properties in materials. Here, we report on the interlayer coupling of two-dimensional (2D) MoSe2 flakes with screw dislocations by atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. By controlling the supersaturation conditions, 2D MoSe2 flakes with screw dislocations are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD). AFM measurements reveal that the interlayer spacing in such 2D MoSe2 flakes with screw dislocation is slightly widened with respect to the normal AA- or AB-stacked ones due to the presence of the screw dislocations. Raman and PL spectra show that the interlayer coupling is weaker and thus the band gap is wider than that in the normal AA-or AB-stacked ones. Our work demonstrates that the interlayer coupling of 2D transition metal dichalcogenides (TMDCs) flakes can be tuned by the induction of screw dislocations, which is very helpful for developing novel catalysts and electronic devices.
UR  - https://doi.org/10.1007/s12274-019-2456-y
DO  - 10.1007/s12274-019-2456-y