@article{Lu2014, 
author = {Wanglin Lu and Haiyan Nan and Jinhua Hong and Yuming Chen and Chen Zhu and Zheng Liang and Xiangyang Ma and Zhenhua Ni and Chuanhong Jin and Ze Zhang},
title = {Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization},
year = {2014},
journal = {Nano Research},
volume = {7},
number = {6},
pages = {853-859},
keywords = {Raman spectroscopy, two-dimensional semiconductor, Mechanical cleavage, monolayer phosphorene, plasma thinning, optical contrast},
url = {https://www.sciopen.com/article/10.1007/s12274-014-0446-7},
doi = {10.1007/s12274-014-0446-7},
abstract = {There have been continuous efforts to seek novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and a subsequent Ar+ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast spectra combined with atomic force microscopy (AFM). Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of the A2g mode stiffens, and the intensity ratio of A2g to A1g modes shows a monotonic discrete increase with the decrease of phosphorene thickness down to a monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor. This work on monolayer phosphorene fabrication and thickness determination will facilitate future research on phosphorene.}
}