@article{Qiu2016, 
author = {Dongri Qiu and Dong Uk Lee and Kyoung Su Lee and Sang Woo Pak and Eun Kyu Kim},
title = {Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures},
year = {2016},
journal = {Nano Research},
volume = {9},
number = {8},
pages = {2319-2326},
keywords = {two-dimensional (2D) material, graphene, hexagonal boron nitride (hBN), tungsten disulphide (WS)2, heterostructure},
url = {https://www.sciopen.com/article/10.1007/s12274-016-1118-6},
doi = {10.1007/s12274-016-1118-6},
abstract = {Two-dimensional (2D) crystals have a multitude of forms, including semi-metals, semiconductors, and insulators, which are ideal for assembling isolated 2D atomic materials to create van der Waals (vdW) heterostructures. Recently, artificially-stacked materials have been considered promising candidates for nanoelectronic and optoelectronic applications. In this study, we report the vertical integration of layered structures for the fabrication of prototype non-volatile memory devices. A semiconducting-tungsten-disulfide-channel-based memory device is created by sandwiching high-density-of-states multi-layered graphene as a carrier-confining layer between tunnel barriers of hexagonal boron nitride (hBN) and silicon dioxide. The results reveal that a memory window of up to 20 V is opened, leading to a high current ratio (> 103) between programming and erasing states. The proposed design combination produced layered materials that allow devices to attain perfect retention at 13% charge loss after 10 years, offering new possibilities for the integration of transparent, flexible electronic systems.}
}