@article{Chen2019, 
author = {Po-Chun Chen and Chih-Pin Lin and Chuan-Jie Hong and Chih-Hao Yang and Yun-Yan Lin and Ming-Yang Li and Lain-Jong Li and Tung-Yuan Yu and Chun-Jung Su and Kai-Shin Li and Yuan-Liang Zhong and Tuo-Hung Hou and Yann-Wen Lan},
title = {Effective N-methyl-2-pyrrolidone wet cleaning for fabricating highperformance monolayer MoS2 transistors},
year = {2019},
journal = {Nano Research},
volume = {12},
number = {2},
pages = {303-308},
keywords = {field-effect transistors, monolayer MoS2 devices, standard wet cleaning, N-methyl-2-pyrrolidone},
url = {https://www.sciopen.com/article/10.1007/s12274-018-2215-5},
doi = {10.1007/s12274-018-2215-5},
abstract = {Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS2, but also significantly improves the performance of monolayer MoS2 field-effect-transistors. Superior device on current of 12 μA·μm–1 for a channel length of 400 nm, contact resistance of 15 kΩ·μm, field-effect mobility of 15.5 cm2·V–1·s–1, and the average on–off current ratio of 108 were successfully demonstrated}
}