@article{Carrascoso2021, 
author = {Felix Carrascoso and Hao Li and Riccardo Frisenda and Andres Castellanos-Gomez},
title = {Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2},
year = {2021},
journal = {Nano Research},
volume = {14},
number = {6},
pages = {1698-1703},
keywords = {two-dimensional (2D) materials, transition metal dichalcogenides, band gap, strain engineering, differential reflectance},
url = {https://www.sciopen.com/article/10.1007/s12274-020-2918-2},
doi = {10.1007/s12274-020-2918-2},
abstract = {Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.}
}