@article{Qin2019, 
author = {Jingkai Qin and Hang Yan and Gang Qiu and Mengwei Si and Peng Miao and Yuqin Duan and Wenzhu Shao and Liang Zhen and Chengyan Xu and Peide D Ye},
title = {Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures},
year = {2019},
journal = {Nano Research},
volume = {12},
number = {3},
pages = {669-674},
keywords = {van der Waals heterostructures, ReS2, trigonal selenium (t-Se) nanobelt, phototransistor},
url = {https://www.sciopen.com/article/10.1007/s12274-019-2275-1},
doi = {10.1007/s12274-019-2275-1},
abstract = {The combination of mixed-dimensional semiconducting materials can provide additional freedom to construct integrated nanoscale electronic and optoelectronic devices with diverse functionalities. In this work, we report a high-performance dual-channel phototransistor based on one-dimensional (1D)/two-dimensional (2D) trigonal selenium (t-Se)/ReS2 heterostructures grown by chemical vapor deposition. The injection and separation efficiency of photogenerated electron–hole pairs can be greatly improved due to the high-quality interfacial contact between t-Se nanobelts and ReS2 films. Compared with bare ReS2 film devices, the dual-channel phototransistor based on t-Se/ReS2 heterostructure exhibits considerable enhancement with the responsivity (R) and detectivity (D*) up to 98 A·W–1 and 6 × 1010 Jones at 400 nm illumination with an intensity of 1.7 mW·cm-2, respectively. Besides, the response time can also be reduced by three times of magnitude to less than 50 ms due to the type-Ⅱ band alignment at the interface. This study opens up a promising avenue for high-performance photodetectors by constructing mixed-dimensional heterostructures.}
}