@article{Zheng2019, 
author = {Yue Zheng and Zehua Hu and Cheng Han and Rui Guo and Du Xiang and Bo Lei and Yanan Wang and Jun He and Min Lai and Wei Chen},
title = {Black phosphorus inverter devices enabled by in-situ aluminum surface modification},
year = {2019},
journal = {Nano Research},
volume = {12},
number = {3},
pages = {531-536},
keywords = {black phosphorus, aluminum, surface doping, electron mobility, inverter},
url = {https://www.sciopen.com/article/10.1007/s12274-018-2246-y},
doi = {10.1007/s12274-018-2246-y},
abstract = {Two-dimensional black phosphorus (BP) generally exhibits a hole-dominated transport characteristic when configured as field-effect transistor devices. The effective control of charge carrier type and concentration is very crucial for the application of BP in complementary electronics. Herein, we report a facile and effective electron doping methodology on BP, through in situ surface modification with aluminum (Al). The electron mobility of few-layer BP is found to be largely enhanced to ~ 10.6 cm2·V-1·s-1 by over 6 times after aluminum modification. In situ photoelectron spectroscopy characterization reveals the formation of Al-P covalent bond at the interface, which can also serve as local gate to tune the transport properties in BP layers. Finally, a spatially-controlled aluminum doping technique is employed to establish a p-n homojunction on a single BP flake, and hence to realize the complementary inverter devices, where the highest gain value of ~ 33 is obtained.}
}